New Al Post-Etch Residue Remover with Al Surface Passivation Function

被引:0
|
作者
Wei, Joyce C. Y. [1 ]
Huang, Micky [1 ]
机构
[1] DuPont Elect & Commun, EKC Technol, Hsinchu 30078, Taiwan
来源
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期
关键词
ALUMINUM;
D O I
10.1149/1.3567601
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new Al post-etch residue remover with Al surface passivation function was developed. It is capable of removing polymer and inorganic residues with good compatibility to thin Aluminum, TiN, TaN, NiSi, and various silicon oxide films. A monolayer of passivation on the Al surface can be deposited in situ to prevent further oxidation and corrosion of the thin Al film. The passivation layer can be easily removed by a short plasma clean or baking to prepare the pristine Al surface for the successive processes. This solution is recommended for cleaning in FEOL high k/metal gate processes and contacts.
引用
收藏
页码:343 / 348
页数:6
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