Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films

被引：14
|
作者：
Zhu, Li Qiang [1 ]
Li, Xiang [1 ]
Yan, Zhong Hui [1 ]
Zhang, Hong Liang [1 ]
Wan, Qing [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Antireflectance; atomic layer deposition (ALD)-deposited Al2O3 film; Si solar cells; surface passivation;
D O I：
10.1109/LED.2012.2219491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of similar to 2.8%. Both p- and n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from similar to 10 mu s before Al2O3 passivation to above 3 ms for both p-and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications.
引用
收藏
页码：1753 / 1755
页数：3
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