Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films

被引：14

作者：

Zhu, Li Qiang ^{[1
]}

Li, Xiang ^{[1
]}

Yan, Zhong Hui ^{[1
]}

Zhang, Hong Liang ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Antireflectance; atomic layer deposition (ALD)-deposited Al2O3 film; Si solar cells; surface passivation;

D O I：

10.1109/LED.2012.2219491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of similar to 2.8%. Both p- and n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from similar to 10 mu s before Al2O3 passivation to above 3 ms for both p-and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications.

引用

页码：1753 / 1755

页数：3

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