Thermal Stability of Er2O3-Al2O3 Thin Films Grown on Si Substrates

被引：22
|
作者：
Pan, Xiaojie [1 ]
Zhang, Zhifang [1 ]
Zhu, Yanyan [1 ]
Fang, Zebo [2 ]
Cao, Haijing [1 ]
机构：
[1] Shanghai Univ Elect Power, Dept Phys, Shanghai 200090, Peoples R China
[2] Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China
来源：
ADVANCED FUNCTIONAL MATERIALS (CMC 2017) | 2018年
基金：
上海市自然科学基金; 中国国家自然科学基金;
关键词：
Rare earth oxides; Thermal stability; X-ray photoelectron spectroscopy;
D O I：
10.1007/978-981-13-0110-0_41
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal stability of Er2O3 and Al2O3 doped Er2O3 thin films deposited on Si substrates has been investigated by x-ray diffraction and x-ray photoelectron spectroscopy. The structures for the as-grown Er2O3 and Al2O3 doped Er2O3 films on Si substrates are found to convert from amorphous to polycrystalline at the annealing temperatures above 450 degrees C in O-2 ambience. The crystallinity and the surfaces roughness of Er2O3 thin films on p-type Si (001) substrates are decreased if Al2O3 is doped in them. However, the result is complicated if these Er2O3 and Al2O3 doped Er2O3 thin films deposited on n-type Si(001) substrates.
引用
收藏
页码：363 / 370
页数：8
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