Er:Y2O3 thin films grown by pulsed laser deposition

被引：10
|
作者：
Dikovska, AO
Atanasov, PA
Tomov, RI
Tonchev, SH
Sapundjiev, DT
机构：
[1] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
VACUUM | 2002年 / 69卷 / 1-3期
关键词：
pulsed laser deposition; UV-assisted annealing; doped Y2O3; optical thin films;
D O I：
10.1016/S0042-207X(02)00344-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Deposition of thin films by pulsed laser ablation from an Er2O3:Y2O3 ceramic target for waveguide laser application is reported. Erbium-doped yttrium oxide (Er:Y2O3) thin films are grown on c-cut sapphire under optimized deposition parameters. The effects of ultraviolet (UV)-assisted annealing of thin Er:Y2O3 films on the structural properties and the morphology are investigated. The films exhibit better crystalline structure and smoother surface after post-deposition treatment. The optical transmission spectra and the waveguiding properties of the thin films are reported. The films exhibit lower absorption and scattering losses after UV-assisted annealing. The light is guided to the end of the treated films with propagation losses approximate to2 dB/cm. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：273 / 276
页数：4
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