The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al2O3 substrates

被引：14
|
作者：
Lin, Xingkai [1 ,2 ]
Zhang, Congchun [1 ,2 ]
Yang, Shenyong [1 ,2 ]
Guo, Wei [3 ]
Zhang, Yu [4 ]
Yang, Zhuoqing [1 ,2 ]
Ding, Guifu [1 ,2 ]
机构：
[1] Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China
[3] East China Normal Univ, High Sch 2, Shanghai, Peoples R China
[4] Shanghai Inst Satellite Engn, Shanghai 201109, Peoples R China
来源：
THIN SOLID FILMS | 2019年 / 685卷
关键词：
Annealing; Platinum; Thin films; Temperature coefficient of resistance; Temperature sensor; ELECTRICAL PERFORMANCE; SENSOR;
D O I：
10.1016/j.tsf.2019.06.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Influence of annealing temperature on the microstructural and electrical properties of sputtered N thin films was investigated. N thin films were sputtered on oxidized Si substrates and Al2O3 ceramics respectively and then annealed at different temperature for different time. The microstructures and electrical properties of N thin-film resistances were investigated. N thin films on oxidized Si substrates and Al2O3 ceramics showed different temperature dependent resistance behaviors and crystal growth preference. The temperature coefficient of resistance (TCR) of Al2O3-based resistances was more stable and less affected than the SiO2-based ones, and TCR of SiO2-based ones exhibited continuous increase after two more hours annealing. In addition, the factors that affected TCR were discussed.
引用
收藏
页码：372 / 378
页数：7
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