The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al2O3 substrates

被引：14

作者：

Lin, Xingkai ^{[1
,2
]}

Zhang, Congchun ^{[1
,2
]}

Yang, Shenyong ^{[1
,2
]}

Guo, Wei ^{[3
]}

Zhang, Yu ^{[4
]}

Yang, Zhuoqing ^{[1
,2
]}

Ding, Guifu ^{[1
,2
]}

机构：

[1] Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai, Peoples R China

[2] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China

[3] East China Normal Univ, High Sch 2, Shanghai, Peoples R China

[4] Shanghai Inst Satellite Engn, Shanghai 201109, Peoples R China

来源：

THIN SOLID FILMS | 2019年 / 685卷

关键词：

Annealing; Platinum; Thin films; Temperature coefficient of resistance; Temperature sensor; ELECTRICAL PERFORMANCE; SENSOR;

D O I：

10.1016/j.tsf.2019.06.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of annealing temperature on the microstructural and electrical properties of sputtered N thin films was investigated. N thin films were sputtered on oxidized Si substrates and Al2O3 ceramics respectively and then annealed at different temperature for different time. The microstructures and electrical properties of N thin-film resistances were investigated. N thin films on oxidized Si substrates and Al2O3 ceramics showed different temperature dependent resistance behaviors and crystal growth preference. The temperature coefficient of resistance (TCR) of Al2O3-based resistances was more stable and less affected than the SiO2-based ones, and TCR of SiO2-based ones exhibited continuous increase after two more hours annealing. In addition, the factors that affected TCR were discussed.

引用

页码：372 / 378

页数：7

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