A two-level model for heavily irradiated silicon detectors

被引：13

作者：

Borchi, E

Bruzzi, M

Li, Z

Pirollo, S

机构：

[1] INFM Firenze, I-50139 Florence, Italy

[2] Dipartimento Energet, I-50139 Florence, Italy

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 425卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(98)01378-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Fermi level pinning at a boundary value of approximate to E-v + 0.5 eV, observed in heavily irradiated silicon, has been described considering two main traps related to divacancy (V-2) and carbon-oxygen complex (CiOi), with energy levels at E-c - 0.46 eV (acceptor) and E-v + 0.36 eV (donor), respectively. The appearance of a double junction in irradiated p(+)/n/n(+) silicon detectors is discussed in the framework of the proposed model. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：343 / 346

页数：4

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