Negative photoconductivity in In0.52Al0.48As/In0.7Ga0.3As heterostructures

被引：8
|
作者：
Akazaki, Tatsushi [1 ]
Yamaguchi, Masumi [1 ]
Tsumura, Kouhei [2 ]
Nomura, Shintaro [1 ,2 ]
Takayanagi, Hideaki [3 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan
[3] Tokyo Univ Sci, Tokyo 1628601, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期
关键词：
negative photoconductivity; InAlAs/InGaAs heterostructure; infrared laser; deep level;
D O I：
10.1016/j.physe.2007.09.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigated the transport of a two-dimensional electron gas (2DEG) in an In0.52Al0.48As/In0.7Ga0.3As heterostructure when exposed to light from infrared laser diodes (lambda = 0.78, 1.3 mu m) by means of both Shubnikov-de Haas and Hall-effect measurements. We observed negative photoconductivity due to a reduction in the number of electrons in the 2DEG when they were illuminated by photons at lambda = 1.3 mu m. We speculate that the negative photoconductivity originates from the diffusion and trapping of photo-induced hot electrons at deep impurity levels in the InAlAs barrier layer near the InAlAs/InGaAs interface. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1341 / 1343
页数：3
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