Growth of High Quality ZnO Nanowires on Graphene

被引：21
|
作者：
Lee, Keun Young [1 ]
Kumar, Brijesh [1 ]
Park, Hyun-Kyu [1 ]
Choi, Won Mook [4 ]
Choi, Jae-Young [4 ]
Kim, Sang-Woo [1 ,2 ,3 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Ctr Human Interface Nanotechnol HINT, Suwon 440746, South Korea
[4] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 02期
关键词：
Graphene; ZnO; Nanowires; PL; Free Exciton; THIN-FILMS; NANOSTRUCTURES; NANOPARTICLES; DEPOSITION;
D O I：
10.1166/jnn.2012.4627
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report growth of the ZnO nanowires on graphene/SiO2/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 mu m to 10 mu M with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D-0 X).
引用
收藏
页码：1551 / 1554
页数：4
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