Growth of High Quality ZnO Nanowires on Graphene

被引：21

作者：

Lee, Keun Young ^{[1
]}

Kumar, Brijesh ^{[1
]}

Park, Hyun-Kyu ^{[1
]}

Choi, Won Mook ^{[4
]}

Choi, Jae-Young ^{[4
]}

Kim, Sang-Woo ^{[1
,2
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Ctr Human Interface Nanotechnol HINT, Suwon 440746, South Korea

[4] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 02期

关键词：

Graphene; ZnO; Nanowires; PL; Free Exciton; THIN-FILMS; NANOSTRUCTURES; NANOPARTICLES; DEPOSITION;

D O I：

10.1166/jnn.2012.4627

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report growth of the ZnO nanowires on graphene/SiO2/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 mu m to 10 mu M with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D-0 X).

引用

页码：1551 / 1554

页数：4

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