Optical Characterization of Semipolar GaN Light-Emitting Diodes on Sapphire

被引：0
|
作者：
Leung, Benjamin [1 ]
Zhang, Yu [1 ]
Sun, Qian [1 ]
Yerino, Christopher [1 ]
Chen, Zhen [2 ]
Lester, Steve [2 ]
Liao, Kuan-Yung [3 ]
Li, Yun-Li [3 ]
Han, Jung [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, 15 Prospect St, New Haven, CT 06511 USA
[2] Bridgelux Inc, Livermore, CA 94551 USA
[3] Genesis Photon Inc, Tainan, Taiwan
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semipolar (11-22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density template. (C) 2010 Optical Society of America
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页数：2
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