Optical Characterization of Semipolar GaN Light-Emitting Diodes on Sapphire

被引：0

作者：

Leung, Benjamin ^{[1
]}

Zhang, Yu ^{[1
]}

Sun, Qian ^{[1
]}

Yerino, Christopher ^{[1
]}

Chen, Zhen ^{[2
]}

Lester, Steve ^{[2
]}

Liao, Kuan-Yung ^{[3
]}

Li, Yun-Li ^{[3
]}

Han, Jung ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, 15 Prospect St, New Haven, CT 06511 USA

[2] Bridgelux Inc, Livermore, CA 94551 USA

[3] Genesis Photon Inc, Tainan, Taiwan

来源：

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semipolar (11-22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density template. (C) 2010 Optical Society of America

引用

页数：2

共 50 条

[21] GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
Ferdinand Scholz
Thomas Wunderer
Barbara Neubert
Martin Feneberg
Klaus Thonke
MRS Bulletin, 2009, 34 : 328 - 333
[22] GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
Scholz, Ferdinand
Wunderer, Thomas
Neubert, Barbara
Feneberg, Martin
Thonke, Klaus
MRS BULLETIN, 2009, 34 (05) : 328 - 333
[23] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates
Funato, Mitsuru
Ueda, Masaya
Kawakami, Yoichi
Narukawa, Yukio
Kosugi, Takao
Takahashi, Masayoshi
Mukai, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28): : L659 - L662
[24] Sapphire substrate processing for high-performance GaN-based light-emitting diodes - Micropatterning of sapphire substrates and its effect on light enhancement in GaN-based light-emitting diodes
Aota, Natsuko (n-aota@namiki.net), 1600, M Y U Scientific Publishing Division (26):
[25] Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
Chang Sheng Xia
Z. M. Simon Li
Yang Sheng
Li Wen Cheng
Optical and Quantum Electronics, 2015, 47 : 463 - 463
[26] Design of patterned sapphire substrates for GaN-based light-emitting diodes
王海燕
林志霆
韩晶磊
钟立义
李国强
Chinese Physics B, 2015, 24 (06) : 21 - 28
[27] GaN-based light-emitting diodes prepared on vicinal sapphire substrates
Lin, J. C.
Su, Y. K.
Chang, S. J.
Lan, W. H.
Huang, K. C.
Chen, W. R.
Cheng, Y. C.
Lin, W. J.
IET OPTOELECTRONICS, 2007, 1 (01) : 23 - 26
[28] Design of patterned sapphire substrates for GaN-based light-emitting diodes
Wang Hai-Yan
Lin Zhi-Ting
Han Jing-Lei
Zhong Li-Yi
Li Guo-Qiang
CHINESE PHYSICS B, 2015, 24 (06)
[29] Monolithic Integration of GaN-on-Sapphire Light-Emitting Diodes, Photodetectors, and Waveguides
Li, Kwai Hei
Cheung, Yuk Fai
Fu, Wai Yuen
Wong, Kenneth Kin-Yip
Choi, Hoi Wai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (06)
[30] Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities
Oh, Dong-Sub
Jang, Jong-Jin
Nam, Okhyun
Song, Keun-Man
Lee, Sung-Nam
JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) : 33 - 36

← 1 2 3 4 5 →