Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD

被引：16
|
作者：
Sasaki, K [1 ]
Tomoda, H [1 ]
Takada, T [1 ]
机构：
[1] Kanazawa Univ, Dept Elect & Comp Engn, Kanazawa, Ishikawa 920, Japan
来源：
VACUUM | 1998年 / 51卷 / 04期
关键词：
D O I：
10.1016/S0042-207X(98)00250-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The stability of hydrogen plasma intensity generated by the ECR technique was investigated H-alpha intensity decreased with the increase of temperature of the chamber's inside wall. The square root of the H-alpha intensity and the etch rate of silicon were proportional to the microwave power. For the deposition of a crystalline silicon film the deposition rate increased with the increase of the hydrogen gas flow rate while for the case of an amorphous silicon film the deposition rate decreased. A silicon epitaxial film with excellent crystalline quality was successfully realized at 450 degrees C. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：537 / 541
页数：5
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