Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD

被引：16

作者：

Sasaki, K ^{[1
]}

Tomoda, H ^{[1
]}

Takada, T ^{[1
]}

机构：

[1] Kanazawa Univ, Dept Elect & Comp Engn, Kanazawa, Ishikawa 920, Japan

来源：

VACUUM | 1998年 / 51卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(98)00250-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stability of hydrogen plasma intensity generated by the ECR technique was investigated H-alpha intensity decreased with the increase of temperature of the chamber's inside wall. The square root of the H-alpha intensity and the etch rate of silicon were proportional to the microwave power. For the deposition of a crystalline silicon film the deposition rate increased with the increase of the hydrogen gas flow rate while for the case of an amorphous silicon film the deposition rate decreased. A silicon epitaxial film with excellent crystalline quality was successfully realized at 450 degrees C. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：537 / 541

页数：5

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