Optical transition in SiGe self-organized dots

被引：17

作者：

Chen, H ^{[1
]}

Cheng, WQ ^{[1
]}

Xie, XG ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer during the growth of a strained Si/Ge short period superlattice on a Si(001) substrate at a temperature of 800 degrees C by molecular beam epitaxy. The peak of photoluminescence from the quantum dots is at an energy higher than the band gap of Si. The intensity is two orders of magnitude higher than that of SiGe/Si quantum well. (C) 1997 American Institute of Physics.

引用

页码：446 / 448

页数：3

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