Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography

被引：3

作者：

Ganesan, R ^{[1
]}

Choi, JH ^{[1
]}

Yun, HJ ^{[1
]}

Kwon, YG ^{[1
]}

Kim, KS ^{[1
]}

Oh, TH ^{[1
]}

Kim, JB ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Sch Mol Sci BK21, Taejon 305701, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2 | 2005年 / 5753卷

关键词：

nanomolecular resist; POSS; cholic acid; diazodiketo; photobleaching;

D O I：

10.1117/12.599622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130 degrees C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.

引用

页码：671 / 678

页数：8

共 50 条

[31] Development of high-performance negative-tone resists for 193-nm lithography
Hattori, T
Yokoyama, Y
Kimura, K
Yamanaka, R
Tanaka, T
Fukuda, H
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 175 - 186
[32] Non-chemically amplified resists containing polyhedral oligomeric silsesquioxane for a bilayer resist system
Woo, Seung A.
Choi, Soo Young
Kim, Jin-Baek
POLYMER, 2016, 98 : 336 - 343
[33] Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance
Chen, Lan
Goh, Yong-Keng
Lawrie, Kirsten
Smith, Bruce
Montgomery, Warren
Zimmerman, Paul
Blakey, Idriss
Whittaker, Andrew
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
[34] Dissolution inhibitors for 193-nm chemically amplified resists
Ushirogouchi, T
Asakawa, K
Okino, T
Shida, N
Kihara, N
Nakase, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7625 - 7631
[35] Dissolution inhibitors for 193-nm chemically amplified resists
Toshiba Corp, Kawasaki, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7625-7631):
[36] The role of photoacid structure on the performance of 193-nm resists
Allen, RD
Opitz, J
Larson, CE
DiPietro, RA
Breyta, G
Hofer, DC
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 44 - 54
[37] Assessment of optical coatings for 193-nm lithography
Liberman, V
Rothschild, M
Sedlacek, JHC
Uttaro, RS
Grenville, A
Bates, AK
Van Peski, C
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 470 - 479
[38] Damage testing of pellicles for 193-nm lithography
Liberman, V
Kunz, RR
Rothschild, M
Sedlacek, JHC
Uttaro, RS
Grenville, A
Bates, AK
Van Peski, C
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 480 - 495
[39] 193-NM LITHOGRAPHY AT MIT LINCOLN LAB
HIBBS, M
KUNZ, R
ROTHSCHILD, M
SOLID STATE TECHNOLOGY, 1995, 38 (07) : 69 - &
[40] Surface imaging resists for 193 nm lithography
Johnson, Donald W., 1600, (31):

← 1 2 3 4 5 →