Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography

被引：3
|
作者：
Ganesan, R [1 ]
Choi, JH [1 ]
Yun, HJ [1 ]
Kwon, YG [1 ]
Kim, KS [1 ]
Oh, TH [1 ]
Kim, JB [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Chem, Sch Mol Sci BK21, Taejon 305701, South Korea
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2 | 2005年 / 5753卷
关键词：
nanomolecular resist; POSS; cholic acid; diazodiketo; photobleaching;
D O I：
10.1117/12.599622
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130 degrees C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.
引用
收藏
页码：671 / 678
页数：8
相关论文
共 50 条
  • [41] NEW SINGLE-LAYER POSITIVE RESISTS FOR 193-NM AND 248-NM LITHOGRAPHY USING METHACRYLATE POLYMERS
    ALLEN, RD
    WALLRAFF, GM
    HINSBERG, WD
    CONLEY, WE
    KUNZ, RR
    SOLID STATE TECHNOLOGY, 1993, 36 (11) : 53 - &
  • [42] Adamantane-based molecular glass resist for 193-nm lithography
    Tanaka, Shinji
    Murakami, Miki
    Fukushima, Kazuya
    Kawano, Naoya
    Uenoyama, Yoshitaka
    Ito, Katsuki
    Ohno, Hidetoshi
    Matsumoto, Nobuaki
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
  • [43] Progress of a CVD-based photoresist 193-nm lithography process
    Lee, C
    Sugiarto, D
    Liao, L
    Mui, D
    Weidman, T
    Nault, M
    Tryba, T
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 329 - 341
  • [44] Characteristics of low Ea 193-nm chemical amplification resists
    Ogata, Toshiyuki
    Kinoshita, Yohei
    Furuya, Sanae
    Matsumaru, Shogo
    Takahashi, Motoki
    Shiono, Daiju
    Dazai, Takahiro
    Hada, Hideo
    Shirai, Masamitsu
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U813 - U824
  • [45] Sensitive Polysulfone Based Chain Scissioning Resists for 193 nm Lithography
    Goh, Yong Keng
    Chen, Lan
    Dorgelo, Anneke
    Peng, Xie
    Lafferty, Neal
    Smith, Bruce
    Zimmerman, Paul
    Montgomery, Warren
    Blakey, Idriss
    Whittaker, Andrew K.
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII, 2011, 7972
  • [46] Imaging and photochemistry studies of fluoropolymers for 193-nm lithography
    Conley, W
    Zimmerman, P
    Miller, D
    Lee, GS
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 207 - 212
  • [47] Subpicometer ArF excimer laser for 193-nm lithography
    Akita, J
    Komori, H
    Kouda, N
    Yoshioka, S
    Itakura, Y
    Mizoguchi, H
    OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 890 - 898
  • [48] Marathon damage testing of pellicles for 193-nm lithography
    Grenville, A
    Liberman, V
    Kunz, RR
    Rothschild, M
    Sedlacek, JHC
    Uttaro, R
    17TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3236 : 456 - 463
  • [49] In-situ polarimetry of illumination for 193-nm lithography
    Nomura, Hiroshi
    Furutono, Yohko
    OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 2008, 6924
  • [50] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
12345