Analytical modeling of high-voltage 4H-SiC junction barrier Schottky (JBS) rectifiers

被引：57

作者：

Zhu, Lin ^{[1
]}

Chow, T. Paul ^{[2
,3
]}

机构：

[1] Power Integrat Inc, San Jose, CA 95138 USA

[2] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

high voltage; junction barrier Schottky (JBS); model; Schottky rectifier; 4H-SiC;

D O I：

10.1109/TED.2008.926638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We develop a new analytical model for the junction barrier Schottky (JBS) rectifier and apply it to high-voltage 4H-SiC JBS rectifiers. This model uses a novel method to approximate the electric field at the Schottky contact, which is together with the Fowler-Nordheim tunneling equation to accurately calculate the reverse leakage current of a high-voltage 4H-SiC JBS rectifier. The forward on-resistance of a high-voltage 4H-SiC JBS rectifier consists of several components, which are dominated by the spreading resistances in the drift layer. Moreover, this model has been verified by comparing the simulation and experimental results, and they are shown to be in good agreement.

引用

页码：1857 / 1863

页数：7

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