Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

被引：5
|
作者：
Yuan Hao [1 ]
Tang Xiaoyan [1 ]
Song Qingwen [2 ]
Zhang Yimen [1 ]
Zhang Yuming [1 ]
Yang Fei [3 ]
Niu Yingxi [3 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[3] State Grid Smart Grid Res Inst, Beijing 102211, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2015年 / 103卷
基金：
中国国家自然科学基金;
关键词：
4H-SiC; Floating junction SBD; Specific on-resistance; Breakdown voltage; Analytical model; JBS; 4H;
D O I：
10.1016/j.sse.2014.10.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：83 / 89
页数：7
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