Modelling of stress-induced leakage current in short-channel n-MOSFETs

被引：0
|
作者：
Kirah, K. [1 ]
机构：
[1] UFE, Fac Engn, El Shorouk City, Cairo, Egypt
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 07期
关键词：
D O I：
10.1049/el.2012.0063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stress-induced leakage current (SILC) in short-channel n-MOSFETs is calculated based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor. It is found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It is also found that SILC is larger in the source side than in the drain side.
引用
收藏
页码：404 / U145
页数：2
相关论文
共 50 条
  • [1] Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
    Karatsori, T. A.
    Theodorou, C. G.
    Haendler, S.
    Planes, N.
    Ghibaud, G.
    Dimitriadis, C. A.
    2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 163 - 164
  • [2] High suppression of the short-channel effect in ultrathin SOI n-MOSFETs
    Suzuki, Eiichi
    Ishii, Kenichi
    Kanemaru, Seigo
    Maeda, Tatsuro
    Sekigawa, Toshihiro
    Nagai, Kiyoko
    Tsutsumi, Toshiyuki
    Hiroshima, Hiroshi
    Annual Device Research Conference Digest, 1999, : 32 - 33
  • [3] Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs
    Chen, William P. N.
    Su, Pin
    Goto, K.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) : 768 - 770
  • [4] Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
    Goguenheim, D.
    Bravaix, A.
    Vuillaume, D.
    Mondon, F.
    Jourdain, M.
    Meinertzhagen, A.
    Journal of Non-Crystalline Solids, 1999, 245 : 41 - 47
  • [5] Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
    Goguenheim, A
    Bravaix, A
    Vuillaume, D
    Mondon, F
    Jourdain, M
    Meinertzhagen, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 245 : 41 - 47
  • [6] Calculation of heavy ion induced leakage current in n-MOSFETs
    Loquet, JG
    David, JP
    Briand, R
    Fouillat, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2656 - 2661
  • [7] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE
    BARNES, JJ
    SHIMOHIGASHI, K
    DUTTON, RW
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 368 - 375
  • [8] LEAKAGE CURRENT DEGRADATION IN N-MOSFETS DUE TO HOT-ELECTRON STRESS
    DUVVURY, C
    REDWINE, DJ
    STIEGLER, HJ
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 579 - 581
  • [9] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE
    BARNES, JJ
    SHIMOHIGASHI, K
    DUTTON, RW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 446 - 453
  • [10] Current and capacitance modeling of short-channel DG MOSFETs
    Borli, H.
    Kolberg, S.
    Fjeldly, T. A.
    Iniguez, B.
    2008 7TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS, 2008, : 34 - +
12345