Modelling of stress-induced leakage current in short-channel n-MOSFETs

被引：0
|
作者：
Kirah, K. [1 ]
机构：
[1] UFE, Fac Engn, El Shorouk City, Cairo, Egypt
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 07期
关键词：
D O I：
10.1049/el.2012.0063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stress-induced leakage current (SILC) in short-channel n-MOSFETs is calculated based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor. It is found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It is also found that SILC is larger in the source side than in the drain side.
引用
收藏
页码：404 / U145
页数：2
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