Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

被引：0
|
作者：
Karatsori, T. A. [1 ,2 ]
Theodorou, C. G. [1 ,2 ]
Haendler, S. [3 ]
Planes, N. [3 ]
Ghibaud, G. [2 ]
Dimitriadis, C. A. [1 ]
机构：
[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki, Greece
[2] Minatec, IMEP LAHC, BP257, F-38016 Grenoble, France
[3] STMicroelectronics, Crolles, France
来源：
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：163 / 164
页数：2
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