LEAKAGE CURRENT DEGRADATION IN N-MOSFETS DUE TO HOT-ELECTRON STRESS

被引：33
|
作者：
DUVVURY, C [1 ]
REDWINE, DJ [1 ]
STIEGLER, HJ [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,MOS MEMORY GRP,HOUSTON,TX 77001
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期
关键词：
D O I：
10.1109/55.9282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：579 / 581
页数：3
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