Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)

被引：1
|
作者：
Garcia-Ramirez, Mario A. [1 ]
Tsuchiya, Yoshishige [1 ]
Mizuta, Hiroshi [1 ]
机构：
[1] Univ Southampton, Nano Grp, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2011年 / 10卷 / 1-2期
关键词：
Non-volatile memory; Nano electromechanical Systems (NEMS); Suspended gate structure; Hybrid circuit simulation; Electron tunelling process; FORCE;
D O I：
10.1007/s10825-011-0361-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a hybrid numerical analysis of a high-speed and non-volatile suspended gate silicon nanodot memory (SGSNM) which co-integrates a nano-electromechanical (NEM) control gate with a MOSFET as a read-out element and silicon nanodots as a floating gate. A hybrid NEM-MOS circuit simulation is developed by taking account of the pull-in/pull-out operation of the suspended gate and electron tunnelling processes through the tunnel oxide layer as behavioural models. The signals for programming, erasing and reading are successfully achieved at circuit level simulation. The programming and erasing times are found as short as 2.5 nsec for a SGSNM with a 1-mu m-long suspended gate, which is a summation of the mechanical pull-in/pull-out times and the tunnel charging/discharging times.
引用
收藏
页码：248 / 257
页数：10
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