Hybrid silicon MOS optoelectronic memristor with non-volatile memory

被引：2
|
作者：
Tossoun, Bassem [1 ]
Sheng, Xia [1 ]
Strachan, John Paul [1 ]
Liang, Di [1 ]
Beausoleil, Raymond G. [1 ]
机构：
[1] Hewlett Packard Enterprise, Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304 USA
来源：
2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年
关键词：
silicon photonics; memristors; optoelectronics;
D O I：
10.1109/ipc47351.2020.9252481
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a heterogeneously integrated III-V on silicon ring modulator integrated with a memristor for nonvolatile memory of optical signals. Demonstrated are hysteresis-loop I-V curves commonly characterizing memristors. The rings also exhibit a change in resonance between the ON and OFF state of the memristor.
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页数：2
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