High-Speed Non-Volatile Optical Memory: Achievements and Challenges

被引:5
|
作者
Zayets, Vadym [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源
ELECTRONICS | 2017年 / 6卷 / 01期
关键词
high-speed optical memory; spin-transfer torque; ferromagnetic-metal; semiconductor hybrid; nanomagnet; spin-polarized current; high-speed electron transport; WAVE-GUIDE; ISOLATOR; SURFACE; PROPAGATION;
D O I
10.3390/electronics6010007
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.
引用
收藏
页数:17
相关论文
共 50 条
  • [1] Non-volatile high-speed resistance switching nanogap junction memory
    Kumaragurubaran, Somu
    Takahashi, Tsuyoshi
    Masuda, Yuichiro
    Furuta, Shegio
    Sumiya, Torou
    Ono, Masatoshi
    Shimizu, Tetsuo
    Suga, Hiroshi
    Horikawa, Masayo
    Naitoh, Yasuhisa
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (26)
  • [2] HIGH-SPEED NON-VOLATILE MNOS/CMOS RAM
    DERBENWICK, G
    DODSON, W
    SOKEL, R
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 239 - 243
  • [3] BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications
    Esseni, D
    Selmi, L
    [J]. MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 231 - 236
  • [4] High-speed and non-volatile nano electro-mechanical memory incorporating Si quantum dots
    Tsuchiya, Y
    Takai, K
    Momo, N
    Nagami, T
    Yamaguchi, S
    Shimada, T
    Mizuta, H
    Oda, S
    [J]. Physics of Semiconductors, Pts A and B, 2005, 772 : 1589 - 1590
  • [5] Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)
    Garcia-Ramirez, Mario A.
    Tsuchiya, Yoshishige
    Mizuta, Hiroshi
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2011, 10 (1-2) : 248 - 257
  • [6] Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)
    Mario A. García-Ramírez
    Yoshishige Tsuchiya
    Hiroshi Mizuta
    [J]. Journal of Computational Electronics, 2011, 10 : 248 - 257
  • [7] A Non-Volatile Optical Memory in Silicon Photonics
    Geler-Kremer, Jacqueline
    Ehes, Felix
    Stark, Pascal
    Sharma, Ankita
    Caimi, Daniele
    Offrein, Bert Jan
    Fompeyrine, Jean
    Abel, Stefan
    [J]. 2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC), 2021,
  • [8] High-speed and energy-efficient non-volatile silicon photonic memory based on heterogeneously integrated memresonator
    Tossoun, Bassem
    Liang, Di
    Cheung, Stanley
    Fang, Zhuoran
    Sheng, Xia
    Strachan, John Paul
    Beausoleil, Raymond G.
    [J]. NATURE COMMUNICATIONS, 2024, 15 (01)
  • [9] Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations
    Dastgeer, Ghulam
    Nisar, Sobia
    Rasheed, Aamir
    Akbar, Kamran
    Chavan, Vijay D.
    Kim, Deok-kee
    Wabaidur, Saikh Mohammad
    Zulfiqar, Muhammad Wajid
    Eom, Jonghwa
    [J]. NANO ENERGY, 2024, 119
  • [10] FCAT - LOW-VOLTAGE HIGH-SPEED ALTERABLE N-CHANNEL NON-VOLATILE MEMORY DEVICE
    HORIUCHI, M
    KATTO, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 914 - 918