Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

被引：2
|
作者：
Zhang, Xuejiao [1 ]
Xu, Zhiwei [2 ]
Sun, Bai [3 ]
Liu, Jianjun [1 ]
Cao, Yanyan [1 ]
Qiao, Haixia [2 ]
Huang, Yong [2 ,4 ]
Pang, Xiaofeng [4 ]
机构：
[1] Hebei North Univ, Sch Informat Sci & Engn, Zhangjiakou 075000, Peoples R China
[2] Hebei North Univ, Coll Lab Med, Zhangjiakou 075000, Peoples R China
[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
[4] Univ Elect Sci & Technol China, Sch Phys & Elect, Chengdu 610054, Sichuan, Peoples R China
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 04期
关键词：
Resistive Switching; Multiple States; Photo-Controlled; Non-Volatile; RRAM; ROOM-TEMPERATURE; HIERARCHICAL NANOSTRUCTURES; CONTROLLABLE SYNTHESIS; CAWO4; NANOPARTICLES; GROWTH-MECHANISM; NANOWIRES; LUMINESCENCE; ILLUMINATION; DEPOSITION; NANORODS;
D O I：
10.1166/jnn.2018.14282
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The recent discovery of non-volatile resistive-switching memory is a promising phenomenon for the semiconductor industry and electronic device technology. In our work, CaWO4 nanoparticles were synthesised through a one-step hydrothermal reaction. A resistive-switching memory device with Ag/CaWO4/fluorine-doped tin oxide structure was prepared. This device presents photo-induced multiple-state memory behaviour at room temperature. This study is valuable for exploring multifunctional materials and their applications in photo-controlled multiple-state non-volatile memories.
引用
收藏
页码：2650 / 2656
页数：7
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