Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

被引：2

作者：

Zhang, Xuejiao ^{[1
]}

Xu, Zhiwei ^{[2
]}

Sun, Bai ^{[3
]}

Liu, Jianjun ^{[1
]}

Cao, Yanyan ^{[1
]}

Qiao, Haixia ^{[2
]}

Huang, Yong ^{[2
,4
]}

Pang, Xiaofeng ^{[4
]}

机构：

[1] Hebei North Univ, Sch Informat Sci & Engn, Zhangjiakou 075000, Peoples R China

[2] Hebei North Univ, Coll Lab Med, Zhangjiakou 075000, Peoples R China

[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China

[4] Univ Elect Sci & Technol China, Sch Phys & Elect, Chengdu 610054, Sichuan, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 04期

关键词：

Resistive Switching; Multiple States; Photo-Controlled; Non-Volatile; RRAM; ROOM-TEMPERATURE; HIERARCHICAL NANOSTRUCTURES; CONTROLLABLE SYNTHESIS; CAWO4; NANOPARTICLES; GROWTH-MECHANISM; NANOWIRES; LUMINESCENCE; ILLUMINATION; DEPOSITION; NANORODS;

D O I：

10.1166/jnn.2018.14282

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The recent discovery of non-volatile resistive-switching memory is a promising phenomenon for the semiconductor industry and electronic device technology. In our work, CaWO4 nanoparticles were synthesised through a one-step hydrothermal reaction. A resistive-switching memory device with Ag/CaWO4/fluorine-doped tin oxide structure was prepared. This device presents photo-induced multiple-state memory behaviour at room temperature. This study is valuable for exploring multifunctional materials and their applications in photo-controlled multiple-state non-volatile memories.

引用

页码：2650 / 2656

页数：7

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