Influence of annealing on properties of ZnO films grown via plasma-enhanced MOCVD

被引：0

作者：

Zhao, BJ ^{[1
]}

Du, GT ^{[1
]}

Yang, HJ ^{[1
]}

Wang, JZ ^{[1
]}

Zhang, YT ^{[1
]}

Yang, XT ^{[1
]}

Liu, BY ^{[1
]}

Ma, Y ^{[1
]}

Yang, TP ^{[1
]}

Liu, DL ^{[1
]}

Li, WC ^{[1
]}

Fang, XJ ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect & Engn, Changchun 130023, Peoples R China

来源：

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES | 2003年 / 19卷 / 04期

关键词：

plasma-enhanced MOCVD; sapphire; substrate;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal-organic chemical vapour deposition (MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O-1, electrons, and the molar ratio of O to Zn were determined by X-ray diffraction (XRD). photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films. the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film. and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0.91. while it is 0.78 for the as-grown film.

引用

页码：383 / 385

页数：3

共 50 条

[31] Properties of ZnO thin films grown on Si substrates by MOCVD and ZnO/Si heterojunctions
Zhang, YT
Du, GT
Zhang, BL
Cui, YG
Zhu, HC
Chang, YC
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (11) : 1132 - 1135
[32] Thermal annealing effects on the stress stability in silicon dioxide films grown by plasma-enhanced chemical vapor deposition
Jianyu Fu
Haiping Shang
Zhigang Li
Weibing Wang
Dapeng Chen
Microsystem Technologies, 2017, 23 : 2753 - 2757
[33] Thermal annealing effects on the stress stability in silicon dioxide films grown by plasma-enhanced chemical vapor deposition
Fu, Jianyu
Shang, Haiping
Li, Zhigang
Wang, Weibing
Chen, Dapeng
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (07): : 2753 - 2757
[34] ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
Pilz, Julian
Perrotta, Alberto
Leising, Guenther
Coclite, Anna Maria
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (08):
[35] Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
Nam, Taewook
Lee, Chang Wan
Kim, Hyun Jae
Kim, Hyungjun
APPLIED SURFACE SCIENCE, 2014, 295 : 260 - 265
[36] Study on the uniformity of ZnO films grown by MOCVD
Li, Jian
Wang, Jie
Pei, Yanli
Wang, Gang
CERAMICS INTERNATIONAL, 2019, 45 (11) : 13971 - 13978
[37] Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Abu Ali, Taher
Pilz, Julian
Schaeffner, Philipp
Kratzer, Markus
Teichert, Christian
Stadlober, Barbara
Coclite, Anna Maria
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (21):
[38] Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
Hossbach, C.
Teichert, S.
Thomas, J.
Wilde, L.
Wojcik, H.
Schmidt, D.
Adolphi, B.
Bertram, M.
Muehle, U.
Albert, M.
Menzel, S.
Hintze, B.
Bartha, J. W.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) : H852 - H859
[39] Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Yim, C. J.
Kim, S. U.
Kang, Y. S.
Cho, M. -H.
Ko, D. -H.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (10) : G45 - G48
[40] Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
Boris, David R.
Wheeler, Virginia D.
Avila, Jason R.
Qadri, Syed B.
Eddy, Charles R., Jr.
Walton, Scott G.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (06):

← 1 2 3 4 5 →