Influence of annealing on properties of ZnO films grown via plasma-enhanced MOCVD

被引：0

作者：

Zhao, BJ ^{[1
]}

Du, GT ^{[1
]}

Yang, HJ ^{[1
]}

Wang, JZ ^{[1
]}

Zhang, YT ^{[1
]}

Yang, XT ^{[1
]}

Liu, BY ^{[1
]}

Ma, Y ^{[1
]}

Yang, TP ^{[1
]}

Liu, DL ^{[1
]}

Li, WC ^{[1
]}

Fang, XJ ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect & Engn, Changchun 130023, Peoples R China

来源：

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES | 2003年 / 19卷 / 04期

关键词：

plasma-enhanced MOCVD; sapphire; substrate;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal-organic chemical vapour deposition (MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O-1, electrons, and the molar ratio of O to Zn were determined by X-ray diffraction (XRD). photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films. the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film. and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0.91. while it is 0.78 for the as-grown film.

引用

页码：383 / 385

页数：3

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