Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

被引：25
|
作者：
Wang, Yinzhen
Wang, Shunquan
Zhou, Shengming
Xu, Jun
Ye, Jiandong
Gu, Shulin
Zhang, Rong
Ren, Qiushi
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[4] Shanghai Jiao Tong Univ, Dept Biomed Engn, Shanghai 200240, Peoples R China
[5] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 04期
关键词：
ZnO; sapphire; annealing; AFM; XRD; PL;
D O I：
10.1016/j.apsusc.2006.03.020
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface., The optimum annealing temperature of sapphire substrates is given. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1745 / 1747
页数：3
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