Effects of sapphire substrates surface treatment on epitaxial ZnO thin films grown by MOCVD

被引:10
|
作者
Wang, Yinzhen [1 ]
Chu, Benli [1 ]
He, Qinyu [1 ]
机构
[1] S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510631, Guangdong, Peoples R China
关键词
ZnO thin films; sapphire substrate; surface treatment; MOCVD;
D O I
10.1016/j.vacuum.2008.01.049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface treatment effects of sapphire substrate on the quality of epitaxial ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) were studied. The sapphire substrates have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best-quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by Xray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. Results show that the intensity of (002) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching is strongest. FWHM of (002) diffraction peak is narrowest and the intensity of UV peak of PL spectrum is strongest, indicating Surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1229 / 1232
页数:4
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