Morphology of ZnO grown by MOCVD on sapphire substrates

被引：44
|
作者：
Munuera, C
Zúñiga-Pérez, J
Rommeluere, JF
Sallet, V
Triboulet, R
Soria, F
Muñoz-Sanjosé, V
Ocal, C
机构：
[1] Univ Valencia, Dept Fis Aplicada & Electromagnetisme, E-46100 Burjassot, Valencia, Spain
[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[3] CNRS, LPC, F-92195 Meudon, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 264卷 / 1-3期
关键词：
atomic force microscopy; crystal morphology; metalorganic chemical vapor deposition; oxides; zinc compounds; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2003.12.056
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A quantitative roughness and microstructural analysis of ZnO grown on sapphire by atmospheric metalorganic chemical vapor deposition (MOCVD) is presented. In order to investigate the influence of the substrate on the morphology, different sapphire orientations have been employed. Scanning force microscopy data have been analyzed for a variety of thicknesses to elucidate, if possible, the growth mechanisms involved in the growth process. Our study reveals significant differences between morphologies depending on whether the substrate surface exhibits steps (misoriented a-, c- and r-planes) or not (m-plane); however, no major differences on the calculated roughness coefficients have been found. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：70 / 78
页数：9
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