Low Frequency Noise Performance of Gate-First and Replacement Metal Gate CMOS Technologies

被引：0
|
作者：
Claeys, C. [1 ,2 ]
Lee, J. W. [1 ,2 ]
Simoen, E. [1 ]
Veloso, A. [1 ]
Horiguchi, N. [1 ]
Paraschiv, V. [1 ]
机构：
[1] IMEC, Leuven, Belgium
[2] Katholieke Univ Leuven, EE Dept, Leuven, Belgium
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
关键词：
gate-first; replacement metal gate; low frequency noise; interface traps; RELIABILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low frequency noise characterization is used to compare the quality and reliability of gate dielectric processed using both gate-first and gate-last or replacement metal gate integration schemes. The influence of different processing treatments will be studied, for both planar and FinFET devices, and the obtained results compared with the LF noise specifications of the International Technology Roadmap for Semiconductors (ITRS).
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页数：2
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