Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability

被引：17

作者：

Frank, Martin M. ^{[1
]}

Cartier, Eduard A. ^{[1
]}

Ando, Takashi ^{[1
]}

Bedell, Stephen W. ^{[1
]}

Bruley, John ^{[1
]}

Zhu, Yu ^{[1
]}

Narayanan, Vijay ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 02期

关键词：

KAPPA;

D O I：

10.1149/2.005302ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that aggressive gate dielectric scaling in hafnium-based high-k/metal gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with biaxially strained silicon germanium channels can be achieved in gate-first integration via remote interfacial SiO2 scavenging by metal-doped titanium nitride gates. An inversion thickness of 0.86 nm is reached, corresponding to an equivalent oxide thickness (EOT) of 0.45-0.5 nm. Interlayer-scaling-induced threshold voltage increase and hole mobility reduction are studied in detail. We further establish an exponential interlayer thickness dependence of negative bias temperature instability (NBTI). Previously shown to be effective for nFETs, remote oxygen scavenging is an attractive scaling option for dual-channel CMOS. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：N8 / N10

页数：3

共 15 条

[1] Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability
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Ando, Takashi
Bedell, Stephen W.
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Narayanan, Vijay
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Gourhant, O.
Joseph, V.
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2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2016,
[3] Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
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[4] Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET
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Teh, Young Way
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[5] Dual-Channel Technology with Cap-free Single Metal Gate for High Performance CMOS in Gate-First and Gate-Last Integration
Witters, L.
Mitard, J.
Veloso, A.
Hikavyy, A.
Franco, J.
Kauerauf, T.
Cho, M.
Schram, T.
Sebai, F.
Yamaguchi, S.
Takeoka, S.
Fukuda, M.
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2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[6] Extremely Scaled Gate-First High-k/Metal Gate Stack with EOT of 0.55 nm Using Novel Interfacial Layer Scavenging Techniques for 22nm Technology Node and Beyond
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Bruley, J.
Kerber, A.
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Yang, Q.
Brown, S.
Stathis, J.
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Paruchuri, V.
Narayanan, V.
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[7] 8Å Tinv Gate-First Dual Channel Technology Achieving Low-Vt High Performance CMOS
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Takeoka, S.
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Shamiryan, D.
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[8] Extremely Scaled Gate-First High-k/Metal Gate Stack with EOT of 0.55 nm Using Novel Interfacial Layer Scavenging Techniques for 22nm Technology Node and Beyond
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Choi, C.
Edge, L.
Ando, T.
Frank, M.
Jamison, P.
Wang, M.
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[9] Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
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[10] Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
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