Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling

被引：3

作者：

Frank, Martin M. ^{[1
]}

Marchiori, Chiara ^{[2
]}

Bruley, John ^{[1
]}

Fompeyrine, Jean ^{[2
]}

Narayanan, Vijay ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

MOSFET; Gate dielectrics; Metal gate electrodes; Replacement gate; Molecular beam epitaxy; Surface passivation;

D O I：

10.1016/j.mee.2011.03.070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that a thin epitaxial strontium oxide (SrO) interfacial layer enables scaling of titanium nitride/hafnium oxide high-permittivity (high-k) gate stacks for field-effect transistors on silicon. In a low-temperature gate-last process, SrO passivates Si against SiO2 formation and silicidation and equivalent oxide thickness (EOT) of 5 angstrom is achieved, with competitive leakage current and interface trap density. In a gate-first process, Sr triggers HfO2-SiO2 intermixing, forming interfacial high-k silicate containing both Sr and Hf. Combined with oxygen control techniques, we demonstrate an EOT of 6 angstrom with further scaling potential. In both cases, Sr incorporation results in an effective workfunction that is suitable for n-channel transistors. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1312 / 1316

页数：5

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