A Wideband Model for On-Chip Interconnects With Different Shielding Structures

被引：7

作者：

Kang, Kai ^{[1
]}

Cao, Xin ^{[1
]}

Wu, Yunqiu ^{[1
]}

Gao, Zongzhi ^{[1
]}

Tang, Zongxi ^{[1
]}

Ban, Yongling ^{[1
]}

Sun, Lingling ^{[2
]}

Yin, Wen-Yan ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, Chengdu 611731, Sichuan, Peoples R China

[2] Hangzhou Dianzi Univ, Elect & Informat Dept, Hangzhou 310018, Zhejiang, Peoples R China

[3] Zhejiang Univ, Hangzhou 310058, Zhejiang, Peoples R China

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2017年 / 7卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Floating shield; interconnect; modeling; on-chip; parallel ground shields (PGS); solid ground; wideband; MULTIPLE COUPLED INDUCTORS; CLOSED-FORM EXPRESSIONS; SPICE-COMPATIBLE MODEL; EQUIVALENT-CIRCUIT; FREQUENCY; CMOS; SILICON; PARAMETERS; SUBSTRATE; IMPEDANCE;

D O I：

10.1109/TCPMT.2017.2732445

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a wideband model for on-chip interconnects with different shielding structures is proposed. In order to improve the performance of interconnects, solid ground, floating shields, and parallel ground shields are often employed in real applications. Based on the transmission line theory and electromagnetic wave theory, these three different shielding structures are analyzed and discussed. Also, many parasitic effects such as eddy current, skin effect, proximity effect, and substrate loss have been taken into consideration to improve the precision of the proposed model. It is shown that the simulated results of the model are in good agreement with the measured ones up to 110 GHz. The validity of the proposed model has been proven.

引用

页码：1702 / 1712

页数：11

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