Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures

被引：8

作者：

Jursenas, S ^{[1
]}

Miasojedovas, S ^{[1
]}

Kurilcik, G ^{[1
]}

Zukauskas, A ^{[1
]}

Feng, SW ^{[1
]}

Cheng, YC ^{[1
]}

Yang, CC ^{[1
]}

Kuo, CT ^{[1
]}

Tsang, JS ^{[1
]}

机构：

[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303285

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Room-temperature lateral emission in In0.15Ga0.85N/GaN multiple quantum wells (MQWs) of various well thicknesses has been studied by means of excitation-density and time-resolved photoluminescence spectroscopy. The lowest threshold of stimulated emission and the highest emission efficiency has been observed in the structures with the well thickness d = 3 nm. The existence of an optimal well thickness is attributed to enhanced nonradiative recombination for thinner wells and to larger-well-width-invoked indium segregation that results in broadening of the local-state distribution. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2610 / 2613

页数：4

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