Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures

被引：21
|
作者：
Witzigmann, B.
Laino, V. [1 ]
Luisier, A.
Schwarz, U. T.
Fischer, H.
Feicht, G.
Wegscheider, W.
Rumboz, C.
Lell, A.
Haerle, V.
机构：
[1] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[2] Inst Angew & Expt Phys, D-93053 Regensburg, Germany
[3] OSRAM Opto Semicond GmbH, D-93049 Regensburg, Germany
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期
关键词：
InGaN-GaN laser diode (LD); inhomogeneous broadening; microscopic gain model; optical gain;
D O I：
10.1109/LPT.2006.879565
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature dependent spectral gain in InGaNGaN multiple quantum-well structures with 10% In content is investigated. Mode gain is measured in a temperature range between 239 K and 312 K using the Hakki-Paoli technique and compared to simulations. The simulation accounts for temperature-dependent polarization dephasing, and hence homogeneous broadening, in a rigorous fashion, without any fit parameter. It is found that the evolution of the gain spectrum with temperature at different drive currents can be modeled using a temperature-independent single value for inhomogeneous broadening. The resulting compositional fluctuations are compared to structural measurements.
引用
收藏
页码：1600 / 1602
页数：3
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