Optical studies on AlGaN/InGaN/GaN single quantum-well structures under external strains

被引：0
|
作者：
Kurimoto, E
Takahashi, M
Harima, H
Mouri, H
Furukawa, K
Ishida, M
Taneya, M
机构：
[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan
[2] Sharp Co Ltd, Elect Components Labs, Tenri, Nara 6328567, Japan
[3] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence (PL) spectra from AlGaN/InGaN/GaN single quantum well structures with different In content in the InGaN well layer have been measured with applying biaxial tensile stresses by a central-flexure method for the purpose of studing piezoelectric-field effect on the well layer. The band-edge emission from the InGaN well layer showed linear variations against the applied stress with different coefficients depending on the In content. We obtained. e.g., +17.5 meV/GPa for an InGaN layer with 20% In content. Our result presents a direct evidence for the presence of piezoelectric field which depends on the In content.
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页码：103 / 106
页数：4
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