MODELLING AND STUDY OF A MICROWAVE PLASMA SOURCE FOR HIGH-RATE ETCHING

被引：0
|
作者：
Pauly, S. [1 ]
Schulz, A. [1 ]
Walker, M. [1 ]
Gorath, M. [2 ]
Baumgaertner, K-M [2 ]
Tovar, G. E. M. [1 ]
机构：
[1] Univ Stuttgart, Inst Interfacial Proc Engn & Plasma Technol IGVP, Stuttgart, Germany
[2] Muegge GmbH, Reichelsheim, Odenwald, Germany
来源：
17TH INTERNATIONAL CONFERENCE ON MICROWAVE AND HIGH FREQUENCY HEATING (AMPERE 2019) | 2019年
关键词：
Microwave Plasma; Remote Plasma Source; Modelling; Plasma Etching;
D O I：
10.4995/Ampere2019.2019.9757
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
The aim of this study is to investigate and to optimize an existing microwave-powered remote plasma source (RPS) with respect to the etching rate and gas temperature and to simplify the setup to save production costs. To achieve these goals, a FEM-based model of the RPS has been developed in order to investigate the microwave coupling into the plasma chamber and the microwave field distribution as well as the plasma itself. Different examples of FEM-based microwave simulations at different conditions and their experimental validations will be presented.
引用
收藏
页码：35 / 42
页数：8
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