High-density microwave plasma for high-rate and low-temperature deposition of silicon thin film

被引：9
|
作者：
Sakuma, Y
Haiping, L
Ueyama, H
Shirai, H
机构：
[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan
[2] Nihon Koshuha Co Ltd, Kanagawa 2260011, Japan
来源：
VACUUM | 2000年 / 59卷 / 01期
关键词：
microwave plasma; high-density plasma; low temperature; mu c-Si : H; SiH4;
D O I：
10.1016/S0042-207X(00)00279-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel high-density microwave plasma utilizing a spokewise antenna was produced and applied for high-rate and low-temperature deposition of hydrogenated microcrystalline silicon (mu c-Si:H) film. The plasma maintains a uniform state, i.e., high electron density, n(e) > 10(11) cm(-3) and low temperature, T-e of 2-2.5 eV in pure Ar plasma over 20 cm in a diameter. High deposition rate was achieved of 47 Angstrom/s in the growth of highly crystallized and photoconductive mu c-Si : H film at the axial distance, Z = 6 cm from the quartz glass plate from SiH4 and Ar without the use of H-2 dilution method at low substrate temperature, T-s of 250 degrees C. The effects of the total pressure, H-2 dilution ratio, flow rate of SiH4, Fr(SiH4) and the axial distance, Z from the quartz glass plate on the mu c-Si : H him deposition are discussed along with the plasma diagnostics. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：266 / 276
页数：11
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