Hole transport in strained Si1-xGex alloys on Si1-yGey substrates

被引：42

作者：

Bufler, FM ^{[1
]}

Meinerzhagen, B ^{[1
]}

机构：

[1] Univ Bremen, Inst Theoret elektrotech & Mikroelektron, D-28334 Bremen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole transport at 300 K in (001)-strained Si1-xGex alloys grown on unstrained Si1-yGey is theoretically analyzed considering the full band structure and new, accurate mobility experiments. Ohmic in-plane and out-of-plane drift mobilities are computed over the whole range of x and y. Velocity- field characteristics and transient overshoot effects are studied for fields along the [100] and [110] directions in technologically relevant configurations with Monte Carlo simulation. Overshoot peaks around 2 X 10(7) cm/s are found in strained Si and Ge-rich SiGe for 100 kV/cm and the [100] direction. (C) 1998 American Institute of Physics. [S0021-8979(98)06922-9].

引用

页码：5597 / 5602

页数：6

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