Hole transport in strained Si1-xGex alloys on Si1-yGey substrates

Hole transport at 300 K in (001)-strained Si1-xGex alloys grown on unstrained Si1-yGey is theoretically analyzed considering the full band structure and new, accurate mobility experiments. Ohmic in-plane and out-of-plane drift mobilities are computed over the whole range of x and y. Velocity- field characteristics and transient overshoot effects are studied for fields along the [100] and [110] directions in technologically relevant configurations with Monte Carlo simulation. Overshoot peaks around 2 X 10(7) cm/s are found in strained Si and Ge-rich SiGe for 100 kV/cm and the [100] direction. (C) 1998 American Institute of Physics. [S0021-8979(98)06922-9].