Simulation of Nanoscale Dual-channel Strained Si/Strained Si1-yGey/Relaxed Si1-xGex PMOSFET

被引：0
|
作者：
Thien, Yu Chan [1 ]
Kang, Eng Siew [1 ]
Ismail, Razali [1 ]
机构：
[1] UTM, Fac Elect Engn FKE, Skudai 81310, Johor, Malaysia
来源：
2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2012年
关键词：
MOSFETS; MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the effects of several parameters on the threshold voltage of nanoscale dual-channel strained Si/Strained Si1-yGey/relaxed Si1-xGex PMOSFET are investigated using SILVACO TCAD tools. The aspects discussed include strain induced at the channel, channel length, oxide thickness and substrate doping concentration. The electrical characteristics such as current-voltage relationship, subthreshold swing, drain induced barrier lowering and threshold voltage are investigated for 45nm channel length dual-channel strained Si/Strained Si1-yGey/relaxed Si1-xGex PMOSFET. The quantum mechanical effects that arise in sub-nanometer regime are explained in detail. The simulated results show good agreement with the developed analytical model with the incorporation of quantum mechanical effects, showing the accuracy of the obtained results.
引用
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页码：97 / 101
页数：5
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