Molecular dynamics Simulations of the growth of thin a-C:H films under additional ion bombardment:: Influence of the growth species and the Ar+ ion kinetic energy

被引：18

作者：

Neyts, Erik ^{[1
]}

Eckert, Maxie ^{[1
]}

Bogaerts, Annemie ^{[1
]}

机构：

[1] Plasma Laser Ablat & Surface Modelling ANTwerp, B-2610 Antwerp, Belgium

来源：

CHEMICAL VAPOR DEPOSITION | 2007年 / 13卷 / 6-7期

关键词：

film growth; hydrogenated amorphous carbon; ion bombardment; molecular dynamics simulations;

D O I：

10.1002/cvde.200606551

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Molecular dynamics (MD) simulations are used to investigate the growth of thin, amorphous, hydrogenated carbon films for conditions corresponding to an argon/acetylene expanding thermal plasma with additional ion bombardment. It is shown that the hydrocarbon growth species determines the final structure of the film, in particular how the Ar+ ions contribute to the growth process. Attention is focused on how the Ar+ ion energy and flux influence the morphology of the films, the hydrogen content, the density, and the carbon coordination in the films due to a knock-on penetration mechanism.

引用

页码：312 / 318

页数：7

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