Molecular dynamics Simulations of the growth of thin a-C:H films under additional ion bombardment:: Influence of the growth species and the Ar+ ion kinetic energy

被引:18
|
作者
Neyts, Erik [1 ]
Eckert, Maxie [1 ]
Bogaerts, Annemie [1 ]
机构
[1] Plasma Laser Ablat & Surface Modelling ANTwerp, B-2610 Antwerp, Belgium
关键词
film growth; hydrogenated amorphous carbon; ion bombardment; molecular dynamics simulations;
D O I
10.1002/cvde.200606551
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Molecular dynamics (MD) simulations are used to investigate the growth of thin, amorphous, hydrogenated carbon films for conditions corresponding to an argon/acetylene expanding thermal plasma with additional ion bombardment. It is shown that the hydrocarbon growth species determines the final structure of the film, in particular how the Ar+ ions contribute to the growth process. Attention is focused on how the Ar+ ion energy and flux influence the morphology of the films, the hydrogen content, the density, and the carbon coordination in the films due to a knock-on penetration mechanism.
引用
收藏
页码:312 / 318
页数:7
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