CMOS-compatible SOI Micro-Hotplate-based Oxygen Sensor

被引：0

作者：

Avramescu, Viorel ^{[1
]}

De Luca, Andrea ^{[2
]}

Brezeanu, Mihai ^{[1
]}

Ali, Syed Zeeshan ^{[3
]}

Udrea, Florin ^{[2
,3
]}

Buiu, Octavian ^{[1
]}

Cobianu, Cornel ^{[1
]}

Serban, Bogdan ^{[1
]}

Gardner, Julian ^{[4
]}

Dumitru, Viorel ^{[1
]}

Stratulat, Alisa ^{[1
]}

机构：

[1] Sensors & Wireless Lab Bucharest, ACS Global Lab, Honeywell Romania, 169A Calea Floreasca, Bucharest, Romania

[2] Univ Cambridge, Dept Engn, CAPE Bldg,9 JJ Thomson Ave, Cambridge CB3 0FA, England

[3] Cambridge CMOS Sensors Ltd, Deanland House,160 Cowley Rd, Cambridge CB4 0DL, England

[4] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2016年

基金：

英国工程与自然科学研究理事会;

关键词：

GAS-SENSOR; TEMPERATURE; SOICMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports upon the design and characterization of a resistive O-2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) techniques have been used to assess the quality of both the sensing layer and STFO-SOI interface. At room temperature, the SOI sensor shows good sensitivity and fast response time (<= 6 seconds) to O-2 concentration ranging from 0% to 20% in a nitrogen atmosphere. This is the first experimental result showing the potential of this structure as O-2 sensor.

引用

页码：280 / 283

页数：4

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