Cathodoluminescence wavelength imaging study of clustering in InAs/GaAs self-assembled quantum dots

被引:0
|
作者
Rich, DH [1 ]
Zhang, C [1 ]
Mukhametzhanov, I [1 ]
Madhukar, A [1 ]
机构
[1] Univ So Calif, Dept Mat Sci & Engn, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA
来源
MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS | 2000年 / 618卷
关键词
D O I
10.1557/PROC-618-173
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cathodoluminescence wavelength imaging (CLWI) of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral lineshape of the broadened quantum dot (QD) ensemble. The lineshape was found to vary on a scale of similar to mum, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased. SAQDs were also prepared by punctuated island growth (PIG), in which deposition of the total desired amount is broken into two or more stages each separated by time delays. CLWI reveals a reduced variation in the energy of the dominant CL emission on a similar to mum spatial scale, correlating with a narrower size distribution of larger QDs for PIG, as measured in atomic force microscopy.
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页码:173 / 178
页数:6
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